onsemi_FFSD0865B
original

onsemi
FFSD0865B

280-FFSD0865B
PDF Datasheet
Silicon Carbide Schottky Diode 650V 8A DPAK Silicon Carbide Schottky Diode 650V 8A DPAK, 2500-REEL
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Tech Specifications

Max Operating Temperature
175
Number of Terminals
2
Min Operating Temperature
-55
Terminal Position
SINGLE
JEDEC Package Code
TO-252AA
Number of Elements
1
Diode Element Material
SILICON CARBIDE
Diode Type
RECTIFIER DIODE
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FFSD0865B Description

FFSD0865B Description

The FFSD0865B from onsemi is a high-performance 650V, 11.6A Silicon Carbide (SiC) Schottky diode designed for demanding power electronics applications. Leveraging SiC technology, this diode delivers superior efficiency, thermal performance, and reliability compared to traditional silicon-based diodes. With zero reverse recovery time (trr = 0 ns) and low forward voltage drop (1.7V @ 8A), it minimizes switching losses and improves system efficiency. The device is housed in a surface-mount DPAK package, making it suitable for compact, high-density designs. Its RoHS3 compliance and REACH-unaffected status ensure environmental and regulatory compatibility.

FFSD0865B Features

  • Zero Reverse Recovery Time (0 ns): Eliminates switching losses, enhancing efficiency in high-frequency circuits.
  • High Voltage & Current Rating: 650V DC reverse voltage (Vr) and 11.6A average rectified current (Io) for robust performance.
  • Low Leakage Current: 40 µA @ 650V ensures minimal power dissipation in standby modes.
  • SiC Schottky Technology: Superior thermal conductivity and high-temperature operation compared to silicon diodes.
  • Surface-Mount DPAK Package: Optimized for automated assembly and space-constrained applications.
  • Wide Operating Range: MSL 1 (Unlimited) moisture sensitivity allows flexible storage and handling.

FFSD0865B Applications

The FFSD0865B is ideal for high-efficiency, high-frequency power conversion systems, including:

  • Power Factor Correction (PFC) circuits in AC/DC converters.
  • Solar inverters and renewable energy systems, where low losses and high reliability are critical.
  • Switched-Mode Power Supplies (SMPS) and DC-DC converters requiring fast switching.
  • Electric Vehicle (EV) charging systems and motor drives, benefiting from SiC’s thermal stability.
  • Industrial power supplies demanding rugged performance under high-voltage conditions.

Conclusion of FFSD0865B

The FFSD0865B sets a benchmark for SiC Schottky diodes with its zero recovery time, high voltage tolerance, and low conduction losses. Its surface-mount design and compliance with industry standards make it a versatile choice for modern power electronics. Whether in renewable energy, automotive, or industrial systems, this diode delivers efficiency, durability, and performance, outperforming conventional silicon alternatives.

FAQ

Are there related or alternative parts for FFSD0865B?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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What operating temperature range does FFSD0865B support?
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