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FFSD0865B
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FFSD0865B Description
FFSD0865B Description
The FFSD0865B from onsemi is a high-performance 650V, 11.6A Silicon Carbide (SiC) Schottky diode designed for demanding power electronics applications. Leveraging SiC technology, this diode delivers superior efficiency, thermal performance, and reliability compared to traditional silicon-based diodes. With zero reverse recovery time (trr = 0 ns) and low forward voltage drop (1.7V @ 8A), it minimizes switching losses and improves system efficiency. The device is housed in a surface-mount DPAK package, making it suitable for compact, high-density designs. Its RoHS3 compliance and REACH-unaffected status ensure environmental and regulatory compatibility.
FFSD0865B Features
- Zero Reverse Recovery Time (0 ns): Eliminates switching losses, enhancing efficiency in high-frequency circuits.
- High Voltage & Current Rating: 650V DC reverse voltage (Vr) and 11.6A average rectified current (Io) for robust performance.
- Low Leakage Current: 40 µA @ 650V ensures minimal power dissipation in standby modes.
- SiC Schottky Technology: Superior thermal conductivity and high-temperature operation compared to silicon diodes.
- Surface-Mount DPAK Package: Optimized for automated assembly and space-constrained applications.
- Wide Operating Range: MSL 1 (Unlimited) moisture sensitivity allows flexible storage and handling.
FFSD0865B Applications
The FFSD0865B is ideal for high-efficiency, high-frequency power conversion systems, including:
- Power Factor Correction (PFC) circuits in AC/DC converters.
- Solar inverters and renewable energy systems, where low losses and high reliability are critical.
- Switched-Mode Power Supplies (SMPS) and DC-DC converters requiring fast switching.
- Electric Vehicle (EV) charging systems and motor drives, benefiting from SiC’s thermal stability.
- Industrial power supplies demanding rugged performance under high-voltage conditions.
Conclusion of FFSD0865B
The FFSD0865B sets a benchmark for SiC Schottky diodes with its zero recovery time, high voltage tolerance, and low conduction losses. Its surface-mount design and compliance with industry standards make it a versatile choice for modern power electronics. Whether in renewable energy, automotive, or industrial systems, this diode delivers efficiency, durability, and performance, outperforming conventional silicon alternatives.



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