onsemi

FFSH20120A

The FFSH20120A is a high-power, high-efficiency MOSFET from ON Semiconductor. It is designed for use in a variety of high-power applications, including motor control, power conversion, and power management.

Description:

The FFSH20120A is an N-channel, logic-level MOSFET with a drain-to-source voltage (VDS) of 100V and a continuous drain current (ID) of 120A. It features a low on-state resistance (RDS(on)) of 4.5mΩ, which helps to minimize power dissipation and improve efficiency in high-current applications.

Features:

• High-power, high-efficiency MOSFET
• N-channel, logic-level
• Drain-to-source voltage (VDS) of 100V
• Continuous drain current (ID) of 120A
• Low on-state resistance (RDS(on)) of 4.5mΩ
• Suitable for use in high-power applications such as motor control, power conversion, and power management.

Applications:

• Motor control
• Power conversion
• Power management
• High-current applications

In summary, the FFSH20120A is a high-power, high-efficiency MOSFET from ON Semiconductor that is designed for use in a variety of high-power applications. Its low on-state resistance and high drain-to-source voltage make it an ideal choice for applications that require high current and high efficiency.