onsemi

FFSH3065A

FFSH3065A Description

The FFSH3065A from onsemi is a high-performance 650V, 26A silicon carbide (SiC) Schottky diode designed for demanding power electronics applications. Leveraging SiC technology, it delivers superior efficiency, thermal performance, and reliability compared to traditional silicon-based diodes. With zero reverse recovery time (trr = 0 ns) and ultra-low reverse leakage current (200 µA @ 650V), this diode minimizes switching losses and improves system efficiency in high-frequency circuits. Its 1705pF capacitance @ 1V, 100kHz ensures stable operation in fast-switching environments. Packaged in a TO-247-2 through-hole format, it is ideal for high-power designs requiring robust thermal management.

FFSH3065A Features

• Zero Recovery Time (trr = 0 ns): Eliminates reverse recovery losses, enhancing efficiency in high-frequency applications.
• High Voltage & Current Rating: 650V, 26A capability for demanding power circuits.
• Low Capacitance (1705pF @ 1V): Reduces switching noise and improves high-frequency performance.
• SiC Technology: Superior thermal conductivity and higher temperature tolerance than silicon diodes.
• RoHS3 & REACH Compliant: Meets environmental and regulatory standards.
• No MSL Restrictions: Suitable for extended storage and handling without moisture sensitivity concerns.

FFSH3065A Applications

• Power Supplies: High-efficiency PFC (Power Factor Correction) and DC-DC converters.
• Renewable Energy: Solar inverters and wind power systems requiring low-loss diodes.
• Industrial Motor Drives: High-frequency switching in motor control circuits.
• EV Charging Systems: Fast-switching applications where efficiency and thermal performance are critical.
• Telecom & Server PSUs: Reliable operation in high-density power architectures.

Conclusion of FFSH3065A

The FFSH3065A stands out as a high-reliability SiC Schottky diode for modern power electronics, offering zero recovery losses, high voltage tolerance, and excellent thermal properties. Its TO-247-2 package ensures compatibility with high-power designs, while SiC technology future-proofs systems against increasing efficiency demands. Ideal for renewable energy, industrial automation, and EV infrastructure, this diode is a top choice for engineers prioritizing performance and longevity.