onsemi

FFSH3065B-F085  

Single Diodes

FFSH3065B-F085 Description

The FFSH3065B-F085 is a high-performance 650V, 37A silicon carbide (SiC) Schottky diode from onsemi, designed for demanding automotive and industrial applications. Leveraging SiC technology, it delivers superior efficiency with zero reverse recovery time (trr = 0 ns) and minimal switching losses, making it ideal for high-frequency power conversion. The diode features a low forward voltage drop (1.7V @ 30A) and ultra-low leakage current (40 µA @ 650V), ensuring high reliability under extreme conditions. Packaged in a TO-247-2 through-hole format, it is RoHS3 compliant and meets automotive-grade standards, guaranteeing robustness in harsh environments.

FFSH3065B-F085 Features

• Zero Reverse Recovery Time (trr): Eliminates switching losses, enhancing efficiency in high-frequency circuits.
• High Voltage & Current Rating: 650V DC reverse voltage and 37A average rectified current for high-power applications.
• Low Forward Voltage (Vf): 1.7V @ 30A minimizes conduction losses.
• SiC Schottky Technology: Superior thermal performance and reliability compared to traditional silicon diodes.
• Automotive Grade: Compliant with stringent automotive standards for temperature and operational stability.
• No Recovery Time Above 500mA: Ensures seamless performance in fast-switching scenarios.
• REACH & RoHS3 Compliant: Environmentally friendly and free from hazardous substances.

FFSH3065B-F085 Applications

• Electric Vehicle (EV) Systems: On-board chargers (OBCs), DC-DC converters, and traction inverters benefit from its high efficiency and thermal stability.
• Renewable Energy: Solar inverters and wind power systems leverage its fast switching and low losses.
• Industrial Power Supplies: Uninterruptible power supplies (UPS) and motor drives requiring high reliability.
• High-Frequency Converters: Telecom and server power supplies where minimal switching losses are critical.
• Automotive Electronics: Harsh-environment applications like battery management systems (BMS) and LED drivers.

Conclusion of FFSH3065B-F085

The FFSH3065B-F085 sets a benchmark for SiC Schottky diodes with its zero recovery time, high voltage/current handling, and automotive-grade durability. Its low conduction losses and fast switching make it indispensable for modern power electronics, particularly in EVs, renewable energy, and industrial systems. For engineers prioritizing efficiency, thermal performance, and reliability, this diode offers a future-proof solution.

FFSH3065B-F085 Documents

Download datasheets and manufacturer documentation for FFSH3065B-F085

PCN Assembly/Origin :

Mold Compound Change 24/Sep/2019      

Datasheets :

FFSH3065B-F085      

PCN Packaging :

Packing quantity increase 25/Jun/2021      

PCN Design/Specification :

Mult Dev Datasheet Chg 20/Dec/2019      

Environmental Information :

onsemi RoHS       onsemi REACH       Material Declaration FFSH3065B-F085