The FFSH5065A from onsemi is a high-performance 650V, 60A Silicon Carbide (SiC) Schottky diode designed for demanding power electronics applications. Leveraging SiC technology, it delivers superior efficiency, thermal performance, and reliability compared to conventional silicon diodes. With zero reverse recovery time (trr = 0 ns) and ultra-low forward voltage drop (1.75V @ 50A), it minimizes switching losses and improves system efficiency. The diode features a low reverse leakage current (200 µA @ 650V) and high surge current capability, making it ideal for high-frequency, high-temperature environments. Packaged in a TO-247-2 through-hole format, it ensures robust mechanical and thermal performance.
The FFSH5065A excels in applications requiring high efficiency, fast switching, and thermal resilience, including:
The FFSH5065A SiC Schottky diode sets a benchmark for high-voltage, high-current rectification with its zero recovery time, low losses, and robust thermal performance. Its SiC construction ensures longevity in harsh environments, while its TO-247-2 package simplifies integration into high-power designs. Ideal for renewable energy, automotive, and industrial systems, this diode is a superior choice for engineers prioritizing efficiency, reliability, and future-proof performance.
Download datasheets and manufacturer documentation for FFSH5065A