onsemi_FFSP0665A

onsemi
FFSP0665A  
Single Diodes

onsemi
FFSP0665A
280-FFSP0665A
Ersa
onsemi-FFSP0665A-datasheets-7625799.pdf
DIODE SIL CARB 650V 8.8A TO220L
In Stock : 1176

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FFSP0665A Description

FFSP0665A Description

The FFSP0665A from onsemi is a high-performance 650V, 8.8A silicon carbide (SiC) Schottky diode, designed for demanding power electronics applications. Leveraging SiC technology, this diode delivers superior efficiency, thermal performance, and reliability compared to traditional silicon-based diodes. With zero reverse recovery time (trr = 0 ns) and ultra-low forward voltage drop (1.75V @ 6A), it minimizes switching losses and improves system efficiency. The device is housed in a TO-220L package, ensuring robust thermal management and ease of integration in through-hole designs.

FFSP0665A Features

  • Zero Reverse Recovery Time (trr): Eliminates switching losses, enhancing efficiency in high-frequency circuits.
  • High Voltage & Current Rating: 650V DC reverse voltage (Vr) and 8.8A average rectified current (Io) for high-power applications.
  • Low Forward Voltage Drop: 1.75V @ 6A reduces conduction losses.
  • SiC Technology: Superior thermal conductivity and high-temperature stability compared to silicon diodes.
  • RoHS3 & REACH Compliant: Meets environmental and regulatory standards.
  • No Recovery Time Above 500mA: Ensures fast switching without performance degradation.
  • Low Leakage Current: 200µA @ 650V enhances reliability in high-voltage circuits.

FFSP0665A Applications

  • Power Factor Correction (PFC): Ideal for boost PFC stages in SMPS and inverters.
  • Solar Inverters & EV Chargers: High efficiency and thermal stability suit renewable energy systems.
  • Industrial Motor Drives: Zero recovery time minimizes losses in high-frequency PWM applications.
  • Telecom & Server PSUs: Low conduction losses improve energy efficiency in data centers.
  • High-Frequency DC-DC Converters: SiC technology enables compact, high-efficiency designs.

Conclusion of FFSP0665A

The FFSP0665A stands out as a premium SiC Schottky diode for high-voltage, high-efficiency applications. Its zero recovery time, low Vf, and robust thermal performance make it a superior choice over conventional silicon diodes in modern power electronics. Whether in renewable energy, industrial drives, or telecom infrastructure, this diode delivers unmatched reliability and efficiency, aligning with the demands of next-generation power systems.

Tech Specifications

Configuration
PPAP
Product Status
Automotive
Supplier Package
Package / Case
Peak Forward Voltage (V)
Technology
REACH Status
Voltage - DC Reverse (Vr) (Max)
Peak Non-Repetitive Surge Current (A)
EU RoHS
Maximum Continuous Forward Current (A)
Current - Average Rectified (Io)
Operating Temperature - Junction
Moisture Sensitivity Level (MSL)
Capacitance @ Vr, F
ECCN
Mounting Type
Standard Package Name
Current - Reverse Leakage @ Vr
Pin Count
Mounting
SVHC
HTSUS
Package
Reverse Recovery Time (trr)
PCB changed
HTS
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Package Height
Mfr
RoHS Status
Speed
Peak Reverse Current (uA)
Peak Reverse Repetitive Voltage (V)
Material
Package Length
Maximum Diode Capacitance (pF)
Series
Type
Tab
Voltage - Forward (Vf) (Max) @ If
Part Status
Package Width
Base Product Number
Mounting Style
Unit Weight
Vrrm - Repetitive Reverse Voltage
Product
Ir - Reverse Current
RoHS
Minimum Operating Temperature
Tradename
Vf - Forward Voltage
Ifsm - Forward Surge Current
Vr - Reverse Voltage
Maximum Operating Temperature
If - Forward Current
Pd - Power Dissipation
USHTS

FFSP0665A Documents

Download datasheets and manufacturer documentation for FFSP0665A

Ersa Mult Dev Assembly/Mat Chg 16/Jan/2020      
Ersa FFSP0665A      
Ersa FFSP0665A      
Ersa onsemi RoHS       Material Declaration FFSP0665A      

Shopping Guide

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