onsemi

FFSP0865A  

Single Diodes

FFSP0865A Description

The FFSP0865A from onsemi is a high-performance 650V, 13A silicon carbide (SiC) Schottky diode, designed for demanding power electronics applications. Leveraging SiC technology, it delivers superior efficiency, thermal stability, and reliability compared to traditional silicon diodes. With zero reverse recovery time (trr = 0 ns) and minimal reverse leakage current (200 µA @ 650 V), it significantly reduces switching losses and improves system efficiency. The diode features a low forward voltage drop (1.75 V @ 8 A) and high surge current capability, making it ideal for high-frequency and high-temperature environments. Packaged in a TO-220-2 through-hole format, it is RoHS3 compliant and REACH unaffected, ensuring environmental and regulatory compliance.

FFSP0865A Features

• Zero Recovery Time: Eliminates reverse recovery losses, enhancing efficiency in high-speed switching applications.
• High Voltage & Current Rating: 650V DC reverse voltage and 13A average rectified current for robust performance.
• Low Forward Voltage: 1.75 V @ 8 A minimizes conduction losses.
• SiC Technology: Superior thermal conductivity and high-temperature operation compared to silicon diodes.
• Low Leakage Current: 200 µA @ 650 V ensures minimal power dissipation in off-state conditions.
• Through-Hole Mounting: TO-220-2 package for easy integration into power circuits.
• Compliance: RoHS3, REACH, and EAR99 certified for global market suitability.

FFSP0865A Applications

The FFSP0865A excels in high-efficiency, high-frequency power systems, including:

• Power Factor Correction (PFC) circuits in AC/DC converters.
• Solar inverters and renewable energy systems, where low losses and high reliability are critical.
• Switched-Mode Power Supplies (SMPS) and DC-DC converters requiring fast switching.
• Electric vehicle (EV) charging systems and motor drives benefiting from SiC’s thermal performance.
• Industrial power supplies and UPS systems demanding high voltage and current handling.

Conclusion of FFSP0865A

The FFSP0865A SiC Schottky diode sets a benchmark for efficiency and performance in high-voltage applications. Its zero recovery time, low forward voltage, and high-temperature resilience make it a superior choice over conventional silicon diodes. Ideal for renewable energy, automotive, and industrial power systems, it combines cutting-edge SiC technology with robust packaging for reliable operation in demanding environments. For engineers seeking to optimize power efficiency and reduce thermal management complexity, the FFSP0865A delivers unmatched advantages.

FFSP0865A Documents

Download datasheets and manufacturer documentation for FFSP0865A

PCN Assembly/Origin :

Mult Dev Assembly/Mat Chg 16/Jan/2020      

Datasheets :

FFSP0865A      

HTML Datasheet :

FFSP0865A      

Environmental Information :

onsemi RoHS       Material Declaration FFSP0865A       onsemi REACH