onsemi

FFSP10120A  

Single Diodes

FFSP10120A Description

The FFSP10120A from onsemi is a high-performance Silicon Carbide (SiC) Schottky diode designed for demanding power electronics applications. With a 1200V reverse voltage (Vr) and 10A average rectified current (Io), it delivers superior efficiency and reliability in high-voltage circuits. Its fast recovery time (<500ns) and low forward voltage drop (1.75V @ 10A) minimize switching losses, making it ideal for high-frequency operations. The diode features a low reverse leakage current (200µA @ 1200V) and minimal capacitance (612pF @ 1V, 100kHz), ensuring stable performance in high-speed switching environments. Packaged in a TO-220L through-hole format, it is RoHS3 compliant and REACH unaffected, meeting stringent environmental standards.

FFSP10120A Features

• SiC Schottky Technology: Enables high-temperature operation, low switching losses, and superior thermal conductivity.
• High Voltage & Current Rating: 1200V Vr and 10A Io support robust power handling.
• Fast Recovery (<500ns): Reduces energy loss in high-frequency applications.
• Low Forward Voltage (1.75V @ 10A): Enhances efficiency in power conversion.
• Minimal Capacitance (612pF): Improves high-speed switching performance.
• Low Reverse Leakage (200µA @ 1200V): Ensures reliability under high voltage stress.
• Through-Hole (TO-220L) Packaging: Facilitates easy mounting in power modules.
• RoHS3 & REACH Compliant: Environmentally friendly and industry-standard compliant.

FFSP10120A Applications

• Power Supplies: High-efficiency AC/DC and DC/DC converters.
• Renewable Energy Systems: Solar inverters and wind power converters.
• Industrial Motor Drives: High-voltage rectification and freewheeling diodes.
• Electric Vehicle (EV) Charging: Fast-switching power modules for onboard chargers.
• UPS & Telecom Power Systems: Reliable backup power solutions with minimal losses.
• High-Frequency SMPS: Reduced switching losses in switch-mode power supplies.

Conclusion of FFSP10120A

The FFSP10120A stands out as a high-efficiency, high-reliability SiC Schottky diode, offering low conduction losses, fast switching, and superior thermal performance. Its 1200V/10A rating and minimal parasitic effects make it a preferred choice for modern power electronics, particularly in renewable energy, industrial drives, and EV systems. With onsemi’s proven SiC technology, this diode ensures long-term durability and performance in demanding applications.

FFSP10120A Documents

Download datasheets and manufacturer documentation for FFSP10120A

PCN Assembly/Origin :

Mult Dev Mold Chg 28/Oct/2019      

Datasheets :

FFSP10120A      

PCN Packaging :

Mult Devices 24/Oct/2017      

PCN Design/Specification :

Material change 24/May/2019       Datasheet for PTI SIDA devices 21/Sep/2023      

Environmental Information :

onsemi RoHS       Material Declaration FFSP10120A