onsemi

FFSP20120A  

Single Diodes

FFSP20120A Description

The FFSP20120A from onsemi is a high-performance Silicon Carbide (SiC) Schottky diode designed for demanding power electronics applications. With a 1200V reverse voltage (Vr) and 20A average rectified current (Io), this diode offers superior efficiency and reliability in high-voltage, high-frequency circuits. Its zero reverse recovery time (trr = 0 ns) ensures minimal switching losses, making it ideal for fast-switching power converters. The device features a low forward voltage drop (1.75V @ 20A), reducing conduction losses, and exhibits excellent thermal stability due to its SiC technology. Packaged in a TO-220L through-hole format, it is suitable for industrial and automotive applications requiring robust performance.

FFSP20120A Features

• Zero Recovery Time: Eliminates reverse recovery losses, enhancing efficiency in high-frequency designs.
• High Voltage & Current Rating: 1200V Vr and 20A Io support demanding power applications.
• Low Forward Voltage: 1.75V @ 20A minimizes power dissipation.
• SiC Technology: Delivers superior thermal conductivity and high-temperature operation compared to traditional silicon diodes.
• RoHS3 & REACH Compliant: Meets environmental and regulatory standards.
• Robust Packaging: TO-220L ensures mechanical durability and ease of mounting.

FFSP20120A Applications

• Power Supplies: High-efficiency PFC (Power Factor Correction) and DC-DC converters.
• Renewable Energy: Solar inverters and wind turbine systems requiring low-loss diodes.
• Electric Vehicles (EV): On-board chargers and motor drives benefiting from fast switching and high voltage tolerance.
• Industrial Motor Drives: High-frequency inverters for precise control and energy savings.
• Telecom & Server PSUs: Critical for reducing energy loss in high-density power systems.

Conclusion of FFSP20120A

The FFSP20120A stands out as a high-reliability SiC Schottky diode, offering zero recovery losses, high voltage handling, and superior thermal performance. Its combination of low conduction losses and fast switching makes it a preferred choice for modern power electronics in automotive, industrial, and renewable energy sectors. For engineers seeking efficiency and durability in high-power designs, this diode delivers unmatched performance.

FFSP20120A Documents

Download datasheets and manufacturer documentation for FFSP20120A

PCN Assembly/Origin :

Mult Dev Mold Chg 28/Oct/2019      

Datasheets :

FFSP20120A Datasheet      

PCN Packaging :

Mult Devices 24/Oct/2017      

HTML Datasheet :

FFSP20120A Datasheet      

PCN Design/Specification :

Logo 17/Aug/2017       Datasheet for PTI SIDA devices 21/Sep/2023      

Environmental Information :

onsemi RoHS