onsemi

FFSP2065B

FFSP2065B Description

The FFSP2065B from onsemi is a high-performance 650V, 22.5A Silicon Carbide (SiC) Schottky diode, designed for demanding power electronics applications. Leveraging SiC technology, this diode eliminates reverse recovery losses (trr = 0 ns), significantly improving efficiency in high-frequency switching circuits. With a forward voltage (Vf) of 1.7V @ 20A and ultra-low reverse leakage current (40 µA @ 650V), it delivers superior thermal stability and power density. The 866pF capacitance @ 1V, 100kHz ensures minimal switching losses, making it ideal for high-speed applications. Packaged in a TO-220 through-hole format, it is RoHS3 compliant and REACH unaffected, meeting stringent environmental standards.

FFSP2065B Features

• Zero Reverse Recovery Time (trr): Eliminates switching losses, enhancing efficiency in high-frequency designs.
• High Voltage & Current Rating: 650V DC reverse voltage (Vr) and 22.5A average rectified current (Io) for robust performance.
• Low Forward Voltage Drop: 1.7V @ 20A reduces conduction losses.
• SiC Technology: Superior thermal conductivity and reliability compared to traditional silicon diodes.
• Low Capacitance: 866pF @ 1V, 100kHz minimizes switching noise and losses.
• Through-Hole (TO-220) Package: Easy integration into power modules and heatsink-mounted designs.
• Environmental Compliance: RoHS3, REACH unaffected, and EAR99 ECCN for global deployment.

FFSP2065B Applications

• Power Supplies: High-efficiency PFC (Power Factor Correction) and SMPS (Switched-Mode Power Supplies).
• Renewable Energy: Solar inverters and wind power converters requiring low-loss diodes.
• EV Charging Systems: Fast-switching chargers with minimal heat dissipation.
• Industrial Motor Drives: High-frequency inverters for motor control applications.
• Telecom & Data Centers: Server power supplies demanding high reliability and efficiency.

Conclusion of FFSP2065B

The FFSP2065B stands out as a high-efficiency, high-reliability SiC Schottky diode, offering zero reverse recovery losses, low forward voltage, and excellent thermal performance. Its 650V/22.5A rating and TO-220 package make it a versatile choice for power electronics, renewable energy, and industrial systems. By leveraging SiC technology, it outperforms conventional silicon diodes in switching speed, efficiency, and thermal management, making it ideal for next-generation power designs.