onsemi_FGA60N65SMD
original

onsemi
FGA60N65SMD

279-FGA60N65SMD
PDF Datasheet
IGBT, 650V, 60A, Field Stop, 450-TUBE
33 Weeks

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Tech Specifications

Collector Emitter Breakdown Voltage
650V
Collector Emitter Saturation Voltage
1.9V
Collector Emitter Voltage (VCEO)
650V
Collector-emitter Voltage-Max
2.5V
Height
20.1mm
Input Type
STANDARD
Lead Free
Lead Free
Length
15.8mm
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FGA60N65SMD Description

The FGA60N65SMD is a high voltage N-channel MOSFET transistor manufactured by ON Semiconductor. It is designed for use in a variety of applications, including high voltage switching and amplification.

Description:

The FGA60N65SMD is a surface-mount MOSFET transistor with a drain-source voltage (Vds) of 650V and a continuous drain current (Id) of 60A. It features a low on-state resistance (Rds(on)) of 0.06 ohms maximum, which allows for efficient power switching with minimal power loss.

Features:

  • High voltage, high current capability
  • Low on-state resistance for efficient power switching
  • N-channel MOSFET design for use in a wide range of applications
  • Surface-mount package for easy integration into printed circuit board (PCB) designs

Applications:

The FGA60N65SMD is suitable for use in a variety of high voltage switching and amplification applications, including:

  • Power supplies
  • Motor control
  • Inverters
  • Battery management systems
  • High voltage switching circuits

Overall, the FGA60N65SMD is a versatile and high-performance MOSFET transistor that can be used in a wide range of applications requiring high voltage and current handling capabilities.

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