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FGA60N65SMD  

Single IGBTs

The FGA60N65SMD is a high voltage N-channel MOSFET transistor manufactured by ON Semiconductor. It is designed for use in a variety of applications, including high voltage switching and amplification.

Description:

The FGA60N65SMD is a surface-mount MOSFET transistor with a drain-source voltage (Vds) of 650V and a continuous drain current (Id) of 60A. It features a low on-state resistance (Rds(on)) of 0.06 ohms maximum, which allows for efficient power switching with minimal power loss.

Features:

• High voltage, high current capability
• Low on-state resistance for efficient power switching
• N-channel MOSFET design for use in a wide range of applications
• Surface-mount package for easy integration into printed circuit board (PCB) designs

Applications:

The FGA60N65SMD is suitable for use in a variety of high voltage switching and amplification applications, including:

• Power supplies
• Motor control
• Inverters
• Battery management systems
• High voltage switching circuits

Overall, the FGA60N65SMD is a versatile and high-performance MOSFET transistor that can be used in a wide range of applications requiring high voltage and current handling capabilities.

FGA60N65SMD Documents

Download datasheets and manufacturer documentation for FGA60N65SMD

PCN Assembly/Origin :

Assembly/Test 02/Aug/2023      

Datasheets :

FGA60N65SMD      

PCN Packaging :

Mult Devices 24/Oct/2017       Packing quantity increase 28/Dec/2020      

PCN Design/Specification :

Logo 17/Aug/2017       Dimension/Color Change 24/Feb/2021      

Environmental Information :

onsemi RoHS       Material Declaration FGA60N65SMD