onsemi

FGAF20S65AQ

FGAF20S65AQ Description

The FGAF20S65AQ from onsemi is a high-performance 650V, 20A IGBT (Insulated Gate Bipolar Transistor) housed in a robust TO-3PF package. Designed for power switching applications, this device leverages Trench Field Stop technology to deliver low conduction and switching losses, making it ideal for energy-efficient systems. With a collector-emitter breakdown voltage (V_CES) of 650V and a maximum collector current (I_C) of 40A, it ensures reliable operation in demanding environments. Although marked as Obsolete, its specifications remain competitive for legacy designs requiring high-voltage switching with low V_CE(on) (2.1V @ 15V, 20A) and fast switching characteristics (t_d(on/off) = 18ns/102ns).

FGAF20S65AQ Features

• High Voltage & Current Handling: 650V V_CES and 40A I_C (60A pulsed) for robust performance.
• Low Switching Losses: 345µJ (on) and 95µJ (off) switching energy at 400V, 10A, enhancing efficiency.
• Fast Switching: Turn-on/off delays of 18ns/102ns minimize power dissipation.
• Low Gate Charge (38 nC): Reduces drive requirements, simplifying gate driver design.
• Trench Field Stop Technology: Improves conductivity and thermal stability.
• Compliance: ROHS3 Compliant and REACH Unaffected, meeting environmental standards.
• Through-Hole Mounting (TO-3PF): Ensures mechanical durability and heat dissipation.

FGAF20S65AQ Applications

This IGBT excels in high-voltage, medium-power applications such as:

• Motor Drives: Efficient control in industrial and automotive systems.
• Uninterruptible Power Supplies (UPS): Reliable switching for backup power systems.
• Solar Inverters: Optimized for renewable energy conversion.
• Welding Equipment: High-current switching with low losses.
• Induction Heating: Fast switching for precision thermal management.

Conclusion of FGAF20S65AQ

The FGAF20S65AQ combines high voltage tolerance, low conduction losses, and fast switching in a durable TO-3PF package. While obsolete, its Trench Field Stop design and 20A/650V rating make it a viable choice for legacy or niche applications requiring efficient power handling. Engineers seeking alternatives should consider newer onsemi IGBTs with advanced packaging and improved thermal performance.