onsemi

FGH60N60SMD

FGH60N60SMD Description

The FGH60N60SMD from onsemi is a high-performance 600V, 120A IGBT (Insulated Gate Bipolar Transistor) featuring Field Stop technology, optimized for efficiency and robustness in power electronics. Housed in a TO-247 package, this device delivers a collector-emitter breakdown voltage (V_CE) of 600V and a maximum collector current (I_C) of 120A, with a pulsed current capability of 180A. Its low V_CE(on) of 2.5V @ 15V, 60A ensures minimal conduction losses, while the fast switching characteristics (t_d(on)/t_d(off) of 18ns/104ns) and low switching energy (1.26mJ on, 450µJ off) enhance efficiency in high-frequency applications.

FGH60N60SMD Features

• Field Stop Technology: Reduces saturation voltage and improves switching efficiency.
• Low Gate Charge (189 nC): Enables faster switching and reduced drive losses.
• High Current Handling: 120A continuous (180A pulsed) for demanding applications.
• Robust Thermal Performance: 600W max power dissipation in a TO-247 package.
• Fast Reverse Recovery (39 ns): Minimizes losses in inductive load scenarios.
• Compliance: RoHS3 and REACH unaffected, suitable for environmentally conscious designs.
• Standard Input Type: Simplifies drive circuit design compared to niche gate requirements.

FGH60N60SMD Applications

This IGBT excels in high-power switching applications, including:

• Motor Drives: Industrial and automotive inverters requiring high current and voltage tolerance.
• Uninterruptible Power Supplies (UPS): Efficient energy conversion with low conduction losses.
• Solar Inverters: Optimized for photovoltaic systems demanding high reliability.
• Welding Equipment: Robust performance under high-current pulsed conditions.
• Induction Heating: Fast switching minimizes energy waste in resonant circuits.

Conclusion of FGH60N60SMD

The FGH60N60SMD stands out for its balanced trade-off between switching speed and conduction losses, making it ideal for high-efficiency, high-power applications. Its Field Stop architecture, combined with low gate charge and high current capacity, positions it as a superior choice over conventional IGBTs in industrial and renewable energy systems. With onsemi's reliability and compliance with global standards, this device is a robust solution for next-generation power electronics.