


onsemi
FGH80N60FD2TU
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible qualityTech Specifications
FGH80N60FD2TU Description
FGH80N60FD2TU Description
The FGH80N60FD2TU is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed and manufactured by onsemi, a leading semiconductor company. This device is part of the Single IGBTs category and is known for its exceptional technical specifications and performance benefits. With a maximum collector-emitter breakdown voltage of 600V and a maximum collector current of 80A, the FGH80N60FD2TU is suitable for a wide range of applications in the electronics industry.
FGH80N60FD2TU Features
- Technical Specifications:
- Reverse Recovery Time (trr): 61 ns
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Td (on/off) @ 25°C: 21ns/126ns
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
- Gate Charge: 120 nC
- Power - Max: 290 W
- Switching Energy: 1mJ (on), 520µJ (off)
- Performance Benefits:
- Field Stop IGBT Type for improved switching performance
- Low Reverse Recovery Time for reduced switching losses
- High Maximum Collector Current for increased power handling
- Low Vce(on) for reduced conduction losses
- Compliance and Packaging:
- REACH Unaffected
- ROHS3 Compliant
- Through Hole Mounting Type
- Tube Package
FGH80N60FD2TU Applications
The FGH80N60FD2TU is an ideal choice for applications that require high power handling, fast switching, and low conduction losses. Some specific use cases include:
- Industrial Motor Drives: The FGH80N60FD2TU's high current handling and fast switching capabilities make it suitable for motor control applications in industrial settings.
- Power Supplies: The device's low Vce(on) and high power rating make it an excellent choice for power supply designs, where efficiency and performance are critical.
- Renewable Energy Systems: The FGH80N60FD2TU can be used in solar inverters and wind power systems, where high voltage and current ratings are required.
- Electric Vehicles: The device's performance benefits make it suitable for electric vehicle applications, such as battery management systems and motor controllers.
Conclusion of FGH80N60FD2TU
The FGH80N60FD2TU is a powerful and versatile IGBT designed for high-performance applications in the electronics industry. Its unique features, such as the Field Stop IGBT type, low reverse recovery time, and high maximum collector current, make it an ideal choice for demanding applications like industrial motor drives, power supplies, renewable energy systems, and electric vehicles. With its compliance with REACH and RoHS3 standards, the FGH80N60FD2TU is not only a high-performance device but also an environmentally responsible choice for your next project.



.png)

















.png?x-oss-process=image/format,webp/resize,h_32)










