onsemi_FGH80N60FD2TU
original

onsemi
FGH80N60FD2TU

279-FGH80N60FD2TU
PDF Datasheet
600V 80A IGBT TO-247-3 Through Hole
99 Weeks

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Tech Specifications

Package/Case
TO-247-3
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
600V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.4V
Height
20.82mm
Input Type
STANDARD
Length
15.87mm
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FGH80N60FD2TU Description

FGH80N60FD2TU Description

The FGH80N60FD2TU is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed and manufactured by onsemi, a leading semiconductor company. This device is part of the Single IGBTs category and is known for its exceptional technical specifications and performance benefits. With a maximum collector-emitter breakdown voltage of 600V and a maximum collector current of 80A, the FGH80N60FD2TU is suitable for a wide range of applications in the electronics industry.

FGH80N60FD2TU Features

  • Technical Specifications:
    • Reverse Recovery Time (trr): 61 ns
    • Voltage - Collector Emitter Breakdown (Max): 600 V
    • Td (on/off) @ 25°C: 21ns/126ns
    • Current - Collector (Ic) (Max): 80 A
    • Current - Collector Pulsed (Icm): 160 A
    • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
    • Gate Charge: 120 nC
    • Power - Max: 290 W
    • Switching Energy: 1mJ (on), 520µJ (off)
  • Performance Benefits:
    • Field Stop IGBT Type for improved switching performance
    • Low Reverse Recovery Time for reduced switching losses
    • High Maximum Collector Current for increased power handling
    • Low Vce(on) for reduced conduction losses
  • Compliance and Packaging:
    • REACH Unaffected
    • ROHS3 Compliant
    • Through Hole Mounting Type
    • Tube Package

FGH80N60FD2TU Applications

The FGH80N60FD2TU is an ideal choice for applications that require high power handling, fast switching, and low conduction losses. Some specific use cases include:

  1. Industrial Motor Drives: The FGH80N60FD2TU's high current handling and fast switching capabilities make it suitable for motor control applications in industrial settings.
  2. Power Supplies: The device's low Vce(on) and high power rating make it an excellent choice for power supply designs, where efficiency and performance are critical.
  3. Renewable Energy Systems: The FGH80N60FD2TU can be used in solar inverters and wind power systems, where high voltage and current ratings are required.
  4. Electric Vehicles: The device's performance benefits make it suitable for electric vehicle applications, such as battery management systems and motor controllers.

Conclusion of FGH80N60FD2TU

The FGH80N60FD2TU is a powerful and versatile IGBT designed for high-performance applications in the electronics industry. Its unique features, such as the Field Stop IGBT type, low reverse recovery time, and high maximum collector current, make it an ideal choice for demanding applications like industrial motor drives, power supplies, renewable energy systems, and electric vehicles. With its compliance with REACH and RoHS3 standards, the FGH80N60FD2TU is not only a high-performance device but also an environmentally responsible choice for your next project.

FAQ

What package or case is FGH80N60FD2TU available in?
FGH80N60FD2TU is available in the TO-247-3 package / case.
Are there related or alternative parts for FGH80N60FD2TU?
What is FGH80N60FD2TU?
What is the mounting type of FGH80N60FD2TU?
What voltage specification is listed for FGH80N60FD2TU?
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