


onsemi
FJAFS1720TU
276-FJAFS1720TU
PDF Datasheet
1.7kV 800V NPN BJT Transistor, 12A I(C), 60W PD
99 weeks
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Responsible qualityTech Specifications
Collector Base Voltage (VCBO)
1.7kV
Collector Emitter Breakdown Voltage
800V
Collector Emitter Saturation Voltage
250mV
Collector-emitter Voltage-Max
250mV
Emitter Base Voltage (VEBO)
6V
Gain Bandwidth Product
15MHz
Gate to Source Voltage (Vgs)
20V
Height
26.7mm
FJAFS1720TU Description
Bipolar (BJT) Transistor NPN 800 V 12 A 15MHz 60 W Through Hole TO-3PF
FAQ
What is the mounting type of FJAFS1720TU?
FJAFS1720TU uses a Through Hole mounting style based on the listed product specifications.
Is FJAFS1720TU currently in stock?
What package or case is FJAFS1720TU available in?
What operating temperature range does FJAFS1720TU support?
What is the standard lead time for FJAFS1720TU?



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