onsemi_FJI5603DTU
original

onsemi
FJI5603DTU

276-FJI5603DTU
PDF Datasheet
NPN Silicon Transistor, 1000-TUBE
17 Weeks

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Tech Specifications

Package/Case
TO-262-3
Collector Base Voltage (VCBO)
1.6kV
Collector Emitter Breakdown Voltage
800V
Collector Emitter Voltage (VCEO)
800V
Collector-emitter Voltage-Max
2.5V
Emitter Base Voltage (VEBO)
12V
Frequency
5MHz
Gain Bandwidth Product
5MHz
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FJI5603DTU Description

Bipolar (BJT) Transistor NPN 800 V 3 A 5MHz 100 W Through Hole TO-262 (I2PAK)

FAQ

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