onsemi_FJN3302RBU
original

onsemi
FJN3302RBU

292-FJN3302RBU
PDF Datasheet
TRANS PREBIAS NPN 300MW TO92-3

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Tech Specifications

Package/Case
TO-92-3
Collector Emitter Breakdown Voltage
50V
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
300mV
Continuous Collector Current
100mA
Current Rating
100mA
Emitter Base Voltage (VEBO)
10V
hFE Min
30
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FJN3302RBU Description

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 300 mW Through Hole TO-92-3

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