onsemi_FJP2160DTU
original

onsemi
FJP2160DTU

276-FJP2160DTU
PDF Datasheet
NPN BJT Transistor, 1.6kV VCBO, 800V VCEO, 2A IC, TO-220

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Tech Specifications

Package/Case
TO-220-3
Collector Base Voltage (VCBO)
1.6kV
Collector Emitter Breakdown Voltage
800V
Collector-emitter Voltage-Max
750mV
Emitter Base Voltage (VEBO)
12V
Gate to Source Voltage (Vgs)
20V
Height
15.95mm
hFE Min
20
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FJP2160DTU Description

Bipolar (BJT) Transistor NPN 800 V 2 A 5MHz 100 W Through Hole TO-220-3

FAQ

What is the mounting type of FJP2160DTU?
FJP2160DTU uses a Through Hole mounting style based on the listed product specifications.
What operating temperature range does FJP2160DTU support?
Is FJP2160DTU currently in stock?
What package or case is FJP2160DTU available in?
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