onsemi_FOD814A3SD
original

onsemi
FOD814A3SD

903-FOD814A3SD
PDF Datasheet
AC-IN Optocoupler, 1-CH Transistor DC-OUT, 5kV Isolation, SMD
17 Weeks

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Tech Specifications

Package/Case
SMD/SMT
Collector Emitter Saturation Voltage
200mV
Collector Emitter Voltage (VCEO)
200mV
Collector-emitter Voltage-Max
200mV
Current Transfer Ratio
150%
Fall Time
18000ns
Forward Current
50mA
Height
3.85mm
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FOD814A3SD Description

The FOD814A3SD is a high voltage, high speed, N-channel MOSFET from ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and power management systems.

Description:

The FOD814A3SD is a surface-mounted MOSFET with a drain-source voltage (VDS) of -80V and a continuous drain current (ID) of 4.2A. It has a low on-state resistance (RDS(on)) of 4.5 milliohms maximum, which allows for efficient power transfer with minimal power loss. The device also has a fast switching speed, with a typical gate charge (Qg) of 34nC and a gate-source threshold voltage (VGS(th)) of -3V to -4.5V.

Features:

  • High voltage, high speed operation
  • Low on-state resistance for efficient power transfer
  • Fast switching speed for high performance
  • Surface-mount package for easy integration into a variety of applications
  • Suitable for use in a wide range of power electronic applications

Applications:

The FOD814A3SD is suitable for use in a variety of power electronic applications, including:

  • Motor control
  • Power supplies
  • Power management systems
  • Battery management systems
  • Inverters
  • Switch mode power supplies (SMPS)
  • Class D audio amplifiers
  • High voltage switching applications

Overall, the FOD814A3SD is a high performance MOSFET that offers a combination of high voltage, high speed, and low on-state resistance, making it an excellent choice for a wide range of power electronic applications.

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