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FODM121CR2V

The FODM121CR2V is a high voltage, high speed, N-channel power MOSFET from ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and power converters.

Description:

The FODM121CR2V is a surface-mount MOSFET with a drain-to-source voltage (VDS) of 100V, a continuous drain current (ID) of 11.8A, and a pulsed drain current (IDSM) of 120A. It has a low on-state resistance (RDS(on)) of 3.5 milliohms maximum, which helps to minimize power dissipation and improve efficiency.

Features:

• High voltage and current capability
• Low on-state resistance for high efficiency
• Fast switching speed for high frequency applications
• High temperature operation up to 175°C
• Logic level gate drive for easy integration with digital circuits
• Avalanche energy capable for robust operation
• Small package size for space-constrained applications

Applications:

The FODM121CR2V is suitable for a wide range of power electronic applications, including:

• Motor control in industrial and automotive applications
• Power supplies for computers, telecom equipment, and other electronic devices
• Power converters for renewable energy systems, such as solar and wind power
• Battery management systems for electric vehicles and energy storage systems
• LED lighting and power management for consumer electronics

Overall, the FODM121CR2V is a versatile and high-performance MOSFET that offers excellent electrical characteristics and reliability for demanding power electronic applications.