onsemi_FQB9N50CFTM_WS
original

onsemi
FQB9N50CFTM_WS

278-FQB9N50CFTM_WS
PDF Datasheet
MOSFET N-CH 500V 9A D2PAK

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Tech Specifications

Package/Case
TO-263-3
Continuous Drain Current (ID)
9A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
850mR
Drain to Source Voltage (Vdss)
500V
Fall Time
64ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
1.03nF
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FQB9N50CFTM_WS Description

N-Channel 500 V 9A (Tc) 173W (Tc) Surface Mount TO-263 (D2PAK)

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