onsemi
FQD9N25TM-F085
278-FQD9N25TM-F085
Power Field-Effect Transistor, 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Tech Specifications
Package/Case
TO-252-3
Continuous Drain Current (ID)
7.4A
Drain to Source Breakdown Voltage
250V
Drain to Source Resistance
420mR
Drain to Source Voltage (Vdss)
250V
Fall Time
45ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
700pF
FQD9N25TM-F085 Description
N-Channel 250 V 7.4A (Tc) 2.5W (Ta), 55W (Tc) Surface Mount TO-252AA
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