onsemi
FQT1N80TF-WS

278-FQT1N80TF-WS
PDF Datasheet
Power MOSFET, N-Channel, QFET®, 800 V, 0.2 A, 20 Ω, SOT-223, SOT-223 4L, 4000-REEL
14 weeks

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ISO9001
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ISO45001
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Tech Specifications

Max Operating Temperature
150
Number of Terminals
4
Terminal Position
DUAL
Number of Elements
1
Lead Free
Yes
REACH
not_compliant
Military Spec
False

FQT1N80TF-WS Description

FQT1N80TF-WS Description

The FQT1N80TF-WS is a high-performance N-Channel MOSFET from onsemi, designed for applications requiring high voltage and power handling capabilities. This device features a maximum drain-to-source voltage (Vdss) of 800V, making it suitable for various high-voltage applications. With a continuous drain current (Id) of 200mA at 25°C, the FQT1N80TF-WS can handle significant power dissipation, up to 2.1W (Tc). The device is mounted on a surface mount package, making it ideal for compact designs.

FQT1N80TF-WS Features

  • High Voltage Capability: The FQT1N80TF-WS can withstand a maximum drain-to-source voltage of 800V, making it suitable for high-voltage applications.
  • Power Dissipation: Capable of dissipating up to 2.1W (Tc), this device can handle significant power in various applications.
  • Low On-Resistance: With a maximum Rds(on) of 20Ω at 100mA and 10V, the FQT1N80TF-WS offers low on-resistance for efficient power management.
  • Gate Charge: The maximum gate charge (Qg) is 7.2nC at 10V, ensuring fast switching and low power consumption.
  • Input Capacitance: The maximum input capacitance (Ciss) is 195pF at 25V, providing fast response times.
  • Compliance: The FQT1N80TF-WS is compliant with REACH and RoHS3 standards, making it an environmentally friendly choice.
  • Moisture Sensitivity Level: With an MSL of 1 (Unlimited), this device is suitable for use in various environments.

FQT1N80TF-WS Applications

The FQT1N80TF-WS is ideal for a wide range of applications, including:

  • Power Electronics: Due to its high voltage and power handling capabilities, the FQT1N80TF-WS is suitable for power electronics applications such as power supplies, inverters, and motor drives.
  • Industrial Control: The device's high voltage and low on-resistance make it ideal for industrial control applications, including motor control and industrial automation.
  • Automotive: The FQT1N80TF-WS can be used in automotive applications, such as electric vehicle charging systems and battery management systems, due to its high voltage and power dissipation capabilities.

Conclusion of FQT1N80TF-WS

The FQT1N80TF-WS from onsemi is a high-performance N-Channel MOSFET that offers a combination of high voltage, low on-resistance, and power dissipation capabilities. Its compliance with REACH and RoHS3 standards, along with its low gate charge and input capacitance, make it an ideal choice for high-voltage applications in power electronics, industrial control, and automotive markets. With its unique features and advantages, the FQT1N80TF-WS stands out as a reliable and efficient solution for demanding applications.

FAQ

What is FQT1N80TF-WS?
FQT1N80TF-WS is a Single FETs, MOSFETs from onsemi. This product page provides its main specifications, pricing information, availability, and inquiry options.
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