onsemi

FSFR2100XS

The FSFR2100XS is a high-performance, single-channel, full-bridge SiC MOSFET gate driver from ON Semiconductor. It is designed to drive silicon carbide (SiC) MOSFETs in high-voltage applications, such as electric vehicles, solar inverters, and industrial motor drives.

Description:

The FSFR2100XS is a monolithic integrated circuit that provides high-speed, reliable gate drive for SiC MOSFETs. It features a high-voltage output stage capable of driving SiC MOSFETs with voltages up to 1700V. The device also includes advanced protection features, such as overcurrent protection, undervoltage lockout, and thermal shutdown.

Features:

• High-voltage output stage capable of driving SiC MOSFETs up to 1700V
• Single-channel gate driver with high-speed response
• Advanced protection features, including overcurrent protection, undervoltage lockout, and thermal shutdown
• Wide input voltage range (10V to 60V)
• Low propagation delay (50ns typical)
• Low output rise and fall times (60ns typical)
• Small package size (5mm x 6mm)

Applications:

• Electric vehicles (EVs), including traction inverters and onboard chargers
• Solar inverters
• Industrial motor drives
• High-voltage power supplies
• Energy storage systems
• Battery management systems (BMS)
• High-voltage DC-DC converters

The FSFR2100XS is an ideal choice for high-voltage applications that require fast switching and high reliability. Its advanced protection features and small package size make it suitable for a wide range of applications, from electric vehicles to industrial motor drives.