onsemi_HGTG11N120CN
original

onsemi
HGTG11N120CN

279-HGTG11N120CN
PDF Datasheet
Insulated Gate Bipolar Transistor

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Tech Specifications

Package/Case
TO-247-3
Collector Emitter Breakdown Voltage
1.2kV
Collector Emitter Saturation Voltage
2.1V
Collector Emitter Voltage (VCEO)
1.2kV
Collector-emitter Voltage-Max
2.4V
Current Rating
43A
Input Type
STANDARD
Lead Free
Lead Free
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HGTG11N120CN Description

IGBT NPT 1200 V 43 A 298 W Through Hole TO-247-3

FAQ

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Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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