onsemi_HGTP12N60A4D
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onsemi
HGTP12N60A4D

279-HGTP12N60A4D
PDF Datasheet
600V 54A IGBT Transistor TO-220AB Through Hole

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ISO9001
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ISO45001
ISO14001
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Tech Specifications

Package/Case
TO-220AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.7V
Continuous Collector Current
54A
Current Rating
54A
Height
9.4mm
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HGTP12N60A4D Description

HGTP12N60A4D Description

The HGTP12N60A4D is a high-performance, 600V, 54A Single IGBT (Insulated Gate Bipolar Transistor) manufactured by onsemi. This device is designed for high-power applications and offers excellent switching performance. With a reverse recovery time (trr) of 30 ns and a switching energy of 55µJ (on) and 50µJ (off), the HGTP12N60A4D provides fast and efficient operation. It is packaged in a through-hole TO220-3 package, making it suitable for various high-power applications.

HGTP12N60A4D Features

  • 600V collector-emitter breakdown voltage for high-voltage applications
  • 54A maximum collector current for high-power handling
  • 30 ns reverse recovery time for fast switching
  • 55µJ (on) and 50µJ (off) switching energy for efficient operation
  • 2.7V maximum Vce(on) at 15V, 12A for low conduction losses
  • 78 nC gate charge for fast gate control
  • 167W maximum power dissipation for high-power applications
  • REACH unaffected and RoHS3 compliant for environmental compliance
  • Moisture Sensitivity Level (MSL) 1 for unlimited storage time
  • Through-hole TO220-3 package for easy integration into various designs

HGTP12N60A4D Applications

The HGTP12N60A4D is ideal for high-power applications that require fast switching and efficient operation. Some specific use cases include:

  1. Motor control: The HGTP12N60A4D's high current handling and fast switching capabilities make it suitable for motor control applications, such as electric vehicles, industrial drives, and robotics.
  2. Power supplies: The device's low Vce(on) and high power dissipation ratings make it suitable for power supply applications, including uninterruptible power supplies (UPS) and power factor correction (PFC) circuits.
  3. Renewable energy: The HGTP12N60A4D can be used in renewable energy applications, such as solar inverters and wind power converters, due to its high voltage and current ratings.
  4. Industrial automation: The device's fast switching and high power capabilities make it suitable for industrial automation applications, such as servo drives and programmable logic controllers (PLCs).

Conclusion of HGTP12N60A4D

The HGTP12N60A4D is a high-performance, 600V, 54A Single IGBT that offers fast switching, efficient operation, and excellent power handling capabilities. Its unique features, such as low Vce(on), fast reverse recovery time, and low switching energy, make it an ideal choice for high-power applications in motor control, power supplies, renewable energy, and industrial automation. With its REACH unaffected and RoHS3 compliant status, the HGTP12N60A4D is also environmentally friendly, making it a reliable and sustainable choice for high-power electronics design.

FAQ

What operating temperature range does HGTP12N60A4D support?
HGTP12N60A4D has an operating temperature range of 150°C.
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