onsemi_HGTP7N60A4D
original

onsemi
HGTP7N60A4D

279-HGTP7N60A4D
PDF Datasheet
Insulated Gate Bipolar Transistor

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

Package/Case
TO-220-3
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.9V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.7V
Current Rating
34A
Input Type
STANDARD
Lead Free
Lead Free
Show More

HGTP7N60A4D Description

IGBT 600 V 34 A 125 W Through Hole TO-220-3

FAQ

What is the mounting type of HGTP7N60A4D?
HGTP7N60A4D uses a Through Hole mounting style based on the listed product specifications.
What operating temperature range does HGTP7N60A4D support?
What is HGTP7N60A4D?
What voltage specification is listed for HGTP7N60A4D?
Is HGTP7N60A4D currently in stock?
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ