onsemi_HUFA75639G3
original

onsemi
HUFA75639G3

278-HUFA75639G3
Power Field-Effect Transistor

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Tech Specifications

Package/Case
TO-247-3
Continuous Drain Current (ID)
56A
Current Rating
56A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
25mR
Drain to Source Voltage (Vdss)
100V
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
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HUFA75639G3 Description

N-Channel 100 V 56A (Tc) 200W (Tc) Through Hole TO-247-3

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HUFA75639G3 is currently available on an inquiry basis. Please contact us for the latest stock information.
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