onsemi_IRFS450B
original

onsemi
IRFS450B

278-IRFS450B
PDF Datasheet
Discrete MOSFETs, 360-TUBE

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Tech Specifications

Continuous Drain Current (ID)
9.6A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
310mR
Drain to Source Voltage (Vdss)
500V
Fall Time
125ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
3.8nF
Max Operating Temperature
150°C
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IRFS450B Description

N-Channel 500 V 9.6A (Tc) 96W (Tc) Through Hole TO-3PF

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