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KSC1173YTSTUA
276-KSC1173YTSTUA
PDF Datasheet
NPN Epitaxial Silicon Bipolar Junction Transistor (BJT), 1000-TUBE
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Tech Specifications
Package/Case
TO-220-3
Collector Base Voltage (VCBO)
30V
Collector Emitter Saturation Voltage
300mV
Collector-emitter Voltage-Max
30V
Emitter Base Voltage (VEBO)
5V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
10W
KSC1173YTSTUA Description
Bipolar (BJT) Transistor NPN 30 V 3 A 100MHz 10 W Through Hole TO-220-3
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