onsemi

KSC3503DSTU

KSC3503DSTU Description

The KSC3503DSTU is a high-performance NPN transistor designed and manufactured by onsemi. With a maximum collector-emitter breakdown voltage of 300V and a maximum collector current of 100mA, this device is ideal for a variety of high-voltage, high-current applications. The KSC3503DSTU boasts a minimum DC current gain (hFE) of 40 at 10mA collector current and 10V collector-emitter voltage, ensuring excellent performance in switching and amplification applications.

KSC3503DSTU Features

• NPN transistor type
• 300V maximum collector-emitter breakdown voltage
• 100mA maximum collector current
• 7W maximum power dissipation
• 150MHz frequency - transition
• 40 minimum DC current gain (hFE) at 10mA, 10V
• Through-hole mounting type
• TO126-3 package
• Active product status
• REACH unaffected
• RoHS3 compliant
• EAR99 ECCN
• HTSUS 8541.29.0075

KSC3503DSTU Applications

The KSC3503DSTU's high voltage and current capabilities make it an ideal choice for a variety of applications, including:

1. Power switching and amplification in industrial control systems
2. High-voltage signal amplification in communication equipment
3. Motor control and drive circuits in automotive and robotics applications
4. Audio amplification in consumer electronics
5. Power supply regulation and control in computer systems

Conclusion of KSC3503DSTU

The KSC3503DSTU is a versatile and high-performance NPN transistor that offers excellent switching and amplification capabilities. Its unique combination of high voltage, high current, and high frequency performance make it an ideal choice for a wide range of applications in the electronics industry. With its RoHS3 compliance and REACH unaffected status, the KSC3503DSTU is also an environmentally friendly option for designers looking to meet strict regulatory requirements.