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KSD1691GSTU
276-KSD1691GSTU
PDF Datasheet
NPN Epitaxial Silicon Transistor, 1920-TUBE
13 Weeks
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Responsible qualityTech Specifications
Package/Case
TO-126
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
300mV
Collector-emitter Voltage-Max
300mV
Emitter Base Voltage (VEBO)
7V
Height
11mm
hFE Min
100
KSD1691GSTU Description
Bipolar (BJT) Transistor NPN 60 V 5 A 1.3 W Through Hole TO-126-3
FAQ
What is the mounting type of KSD1691GSTU?
KSD1691GSTU uses a Through Hole mounting style based on the listed product specifications.
Is KSD1691GSTU currently in stock?
What voltage specification is listed for KSD1691GSTU?
What package or case is KSD1691GSTU available in?
What is the standard lead time for KSD1691GSTU?



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