The LB1838M-TRM-E is a high voltage, high-speed, N-channel power MOSFET from ON Semiconductor. It is designed for use in a variety of power electronics applications, including motor control, power supplies, and power converters.
The LB1838M-TRM-E is a surface-mount MOSFET with a drain-source voltage (VDS) of up to 30V and a continuous drain current (ID) of up to 3.6A. It has a low on-state resistance (RDS(on)) of 3.5 milliohms maximum, which helps to minimize power dissipation and improve efficiency in power conversion applications. The device also features a low input capacitance (Ciss) of 530pF maximum, which allows for fast switching speeds and improved transient response.
Overall, the LB1838M-TRM-E is a versatile and efficient power MOSFET that is well-suited for a variety of power electronics applications. Its high voltage and high-speed capabilities, combined with its low on-state resistance and input capacitance, make it an excellent choice for applications that require efficient power conversion and fast switching speeds.
Download datasheets and manufacturer documentation for LB1838M-TRM-E