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LB1838M-TRM-E

The LB1838M-TRM-E is a high voltage, high-speed, N-channel power MOSFET from ON Semiconductor. It is designed for use in a variety of power electronics applications, including motor control, power supplies, and power converters.

Description:

The LB1838M-TRM-E is a surface-mount MOSFET with a drain-source voltage (VDS) of up to 30V and a continuous drain current (ID) of up to 3.6A. It has a low on-state resistance (RDS(on)) of 3.5 milliohms maximum, which helps to minimize power dissipation and improve efficiency in power conversion applications. The device also features a low input capacitance (Ciss) of 530pF maximum, which allows for fast switching speeds and improved transient response.

Features:

• High voltage, high-speed N-channel power MOSFET
• Drain-source voltage (VDS) up to 30V
• Continuous drain current (ID) up to 3.6A
• Low on-state resistance (RDS(on)) of 3.5 milliohms maximum
• Low input capacitance (Ciss) of 530pF maximum
• Suitable for use in power electronics applications such as motor control, power supplies, and power converters

Applications:

• Motor control
• Power supplies
• Power converters
• DC-DC converters
• Inverters
• Battery management systems
• High-voltage switching applications

Overall, the LB1838M-TRM-E is a versatile and efficient power MOSFET that is well-suited for a variety of power electronics applications. Its high voltage and high-speed capabilities, combined with its low on-state resistance and input capacitance, make it an excellent choice for applications that require efficient power conversion and fast switching speeds.