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MBR2H200SFT3G

The MBR2H200SFT3G is a high-power, high-efficiency N-channel MOSFET from ON Semiconductor. It is designed for use in a variety of applications, including motor control, power supplies, and power conversion systems.

Description:

The MBR2H200SFT3G is a high-power N-channel MOSFET that features a low on-state resistance (RDS(on)) of 2.3mΩ (maximum) at a gate-source voltage (VGS) of 10V. It also has a high breakdown voltage (VDS) of 200V, making it suitable for use in high-voltage applications.

Features:

• Low on-state resistance (RDS(on)) of 2.3mΩ (maximum) at VGS = 10V
• High breakdown voltage (VDS) of 200V
• N-channel MOSFET
• Suitable for use in high-voltage applications
• Designed for use in motor control, power supplies, and power conversion systems

Applications:

• Motor control
• Power supplies
• Power conversion systems
• High-voltage applications

The MBR2H200SFT3G is a high-power MOSFET that offers high efficiency and low on-state resistance, making it an ideal choice for a range of power electronics applications. Its high breakdown voltage also makes it suitable for use in high-voltage applications, such as power supplies and power conversion systems.