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MBR5H100MFST1G

The MBR5H100MFST1G is a high-power Schottky barrier rectifier from ON Semiconductor. It is designed to handle high currents and high voltages, making it suitable for use in a variety of power conversion applications.

Description:

The MBR5H100MFST1G is a high-power rectifier diode with a maximum repetitive reverse voltage (VRRM) of 100V and a maximum average forward current (IF) of 5A. It is packaged in a surface-mount TO-263-2 package, which is designed for high-power applications.

Features:

• High current capability: The MBR5H100MFST1G can handle a maximum average forward current of 5A, making it suitable for use in high-power applications.
• High voltage capability: The device has a maximum repetitive reverse voltage (VRRM) of 100V, which allows it to be used in high-voltage applications.
• Low forward voltage drop: The MBR5H100MFST1G has a low forward voltage drop, which helps to improve the efficiency of power conversion systems.
• High surge current capability: The device can handle high surge currents, making it suitable for use in applications that require high surge currents, such as motor drives and power supplies.

Applications:

The MBR5H100MFST1G is suitable for use in a variety of power conversion applications, including:

• Motor drives
• Power supplies
• Inverters
• Battery chargers
• High-power switching applications

Overall, the MBR5H100MFST1G is a high-power rectifier diode that is designed to handle high currents and high voltages. Its low forward voltage drop and high surge current capability make it suitable for use in a variety of power conversion applications.