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MBR8H100MFST1G  

Single Diodes

The MBR8H100MFST1G is a high-power, surface-mount Schottky barrier rectifier from ON Semiconductor. It is designed to handle high power levels and high surge currents, making it suitable for a wide range of applications.

Description:

The MBR8H100MFST1G is a high-power rectifier diode with a maximum repetitive reverse voltage (VRRM) of 100V and a maximum average forward current (IF) of 8A. It is packaged in a surface-mount SMB plastic package.

Features:

• High power capability
• High surge current capability
• Low forward voltage drop
• High efficiency
• RoHS compliant

Applications:

The MBR8H100MFST1G is commonly used in power supply circuits, motor control circuits, and other high-power applications. Some specific applications include:

1. Power supply circuits for industrial equipment
2. Motor control circuits for electric vehicles and industrial machinery
3. Inverter circuits for renewable energy systems
4. Battery charging circuits for electric vehicles and portable devices
5. High-power switching circuits for industrial control systems

Overall, the MBR8H100MFST1G is a versatile and reliable rectifier diode that can handle high power levels and high surge currents, making it suitable for a wide range of applications in power electronics.

MBR8H100MFST1G Documents

Download datasheets and manufacturer documentation for MBR8H100MFST1G

Datasheets :

MBR8H100MFS, NRVB8H100MFS      

HTML Datasheet :

MBR8H100MFS, NRVB8H100MFS      

Environmental Information :

onsemi RoHS       Material Declaration MBR8H100MFST1G