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MBRA120ET3G
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Tech Specifications
MBRA120ET3G Description
The MBRA120ET3G is a high-power rectifier diode manufactured by ON Semiconductor. It is designed for use in high-power applications, such as power supplies and motor control circuits.
Description:
The MBRA120ET3G is a high-power rectifier diode with a maximum repetitive reverse voltage (VRRM) of 1200V and a maximum average forward current (IF) of 120A. It is housed in a metal, which provides excellent thermal performance and allows for efficient heat dissipation.
Features:
- High-power rectifier diode
- Maximum repetitive reverse voltage (VRRM) of 1200V
- Maximum average forward current (IF) of 120A
- Metal for excellent thermal performance
- High efficiency and low forward voltage drop
- High surge current capability
- Low leakage current
- RoHS compliant
Applications:
The MBRA120ET3G is suitable for use in a wide range of high-power applications, including:
- Power supplies
- Motor control circuits
- Inverters
- Welding equipment
- Battery charging systems
- Renewable energy systems, such as solar panels and wind turbines
In summary, the MBRA120ET3G is a high-power rectifier diode that offers high efficiency, low forward voltage drop, and excellent thermal performance. It is suitable for use in a wide range of high-power applications, including power supplies, motor control circuits, and renewable energy systems.
FAQ
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 50+ | $0.14536 | $7.27 |
| 150+ | $0.12863 | $19.29 |
| 500+ | $0.10776 | $53.88 |
| 2500+ | $0.09848 | $246.20 |
| 5000+ | $0.09289 | $464.45 |
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