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MBRAF360T3G

The MBRAF360T3G is a high-power, high-voltage MOSFET transistor manufactured by ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and renewable energy systems.

Description:

The MBRAF360T3G is an N-channel MOSFET with a drain-source voltage (Vds) of 300V and a continuous drain current (Id) of 360A. It features a low on-state resistance (Rds(on)) of 3.0 milliohms maximum at a gate-source voltage (Vgs) of 10V, which helps to minimize power dissipation and improve efficiency in high-current applications.

Features:

• High-power, high-voltage MOSFET transistor
• Drain-source voltage (Vds) of 300V
• Continuous drain current (Id) of 360A
• Low on-state resistance (Rds(on)) of 3.0 milliohms maximum at Vgs of 10V
• Suitable for use in a variety of power electronic applications

Applications:

The MBRAF360T3G is suitable for use in a variety of power electronic applications, including:

• Motor control systems for industrial and automotive applications
• Power supplies for telecommunications and computing equipment
• Renewable energy systems, such as solar panel inverters and wind turbine converters
• Battery management systems for electric and hybrid vehicles

Overall, the MBRAF360T3G is a high-performance MOSFET transistor that offers excellent electrical characteristics and reliability for use in a wide range of power electronic applications.