onsemi
MBRD360T4G
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible quality
.png)
Tech Specifications
MBRD360T4G Description
The MBRD360T4G is a high-power Schottky barrier diode from ON Semiconductor. It is designed for use in high-power applications, such as power electronics, renewable energy systems, and automotive electronics.
Description:
The MBRD360T4G is a high-power Schottky barrier diode with a maximum repetitive reverse voltage (VRRM) of 600V and a maximum average forward rectified current (IF) of 360A. It is available in a TO-247AC package, which is suitable for high-power applications.
Features:
- High-power Schottky barrier diode
- Maximum repetitive reverse voltage (VRRM) of 600V
- Maximum average forward rectified current (IF) of 360A
- Low forward voltage drop (VF)
- High surge current capability
- Suitable for use in high-power applications
Applications:
- Power electronics
- Renewable energy systems
- Automotive electronics
- Motor control
- Switch mode power supplies (SMPS)
- Freewheeling diode in bridge rectifiers
In summary, the MBRD360T4G is a high-power Schottky barrier diode that offers a high surge current capability and low forward voltage drop. It is suitable for use in a variety of high-power applications, such as power electronics, renewable energy systems, and automotive electronics.
FAQ
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $0.50572 | $5.06 |
| 30+ | $0.44915 | $13.47 |
| 100+ | $0.39257 | $39.26 |
| 500+ | $0.35485 | $177.43 |
| 1000+ | $0.33772 | $337.72 |
Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately
.png?x-oss-process=image/format,webp/resize,h_32)
