onsemi_MBRD640CTT4G
original

onsemi
MBRD640CTT4G

286-MBRD640CTT4G
PDF Datasheet
Schottky Barrier Rectifier, 40 V, 6.0 A, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
12 Weeks

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ISO9001
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Tech Specifications

Max Operating Temperature
175
Number of Terminals
2
Min Operating Temperature
-65
Terminal Position
SINGLE
Pin Count
3
Number of Elements
2
Diode Element Material
SILICON
Diode Type
RECTIFIER DIODE
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MBRD640CTT4G Description

The MBRD640CTT4G is a high-power Schottky barrier rectifier from ON Semiconductor. This device is designed to handle high power applications and is available in a TO-220 package.

Description:

The MBRD640CTT4G is a high-power rectifier diode with a maximum repetitive reverse voltage (VRRM) of 600V and a maximum average forward current (IF) of 40A. It features a low forward voltage drop and high efficiency, making it suitable for use in high power applications.

Features:

  • Maximum repetitive reverse voltage (VRRM) of 600V
  • Maximum average forward current (IF) of 40A
  • Low forward voltage drop
  • High efficiency
  • Available in a TO-220 package

Applications:

The MBRD640CTT4G is commonly used in a variety of high power applications, including:

  • Power supplies
  • Motor control circuits
  • Inverters
  • Battery charging circuits
  • High-power switching applications

Overall, the MBRD640CTT4G is a high-performance rectifier diode that is well-suited for use in a wide range of high-power applications. Its low forward voltage drop and high efficiency make it an excellent choice for power supply and motor control circuits, while its high current handling capability makes it suitable for use in high-power switching applications.

FAQ

What is MBRD640CTT4G?
MBRD640CTT4G is a Diode Arrays from onsemi. This product page provides its main specifications, pricing information, availability, and inquiry options.
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