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MBRD660CTT4G
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Tech Specifications
MBRD660CTT4G Description
The MBRD660CTT4G is a high-power diode from ON Semiconductor. It is designed for use in high-power applications, such as power electronics and motor control.
Description:
The MBRD660CTT4G is a high-power diode with a maximum repetitive reverse voltage (VRRM) of 600V and a maximum average forward current (IF) of 660A. It is available in a TO-247AC package.
Features:
- High-power diode
- Maximum repetitive reverse voltage (VRRM) of 600V
- Maximum average forward current (IF) of 660A
- Suitable for use in high-power applications
- Available in a TO-247AC package
Applications:
- Power electronics
- Motor control
- High-power switching applications
- High-power rectifier applications
Note: This is a general description and the actual specifications and applications may vary. It is always recommended to refer to the datasheet and consult with a professional before using any electronic component in a design.
FAQ
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $0.53485 | $5.35 |
| 30+ | $0.47485 | $14.25 |
| 100+ | $0.41485 | $41.48 |
| 500+ | $0.37885 | $189.43 |
| 1000+ | $0.36000 | $360.00 |
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