onsemi_MCT5210M
original

onsemi
MCT5210M

903-MCT5210M
PDF Datasheet
400V Phototransistor Optocoupler, 5.3kV Isolation, DIP
13 Weeks

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ISO9001
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Tech Specifications

Package/Case
DIP
Collector Emitter Saturation Voltage
400mV
Collector Emitter Voltage (VCEO)
400mV
Collector-emitter Voltage-Max
400mV
Fall Time
30us
Forward Current
50mA
Input Current
50mA
Input Type
DC
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MCT5210M Description

Optoisolator Transistor with Base Output 4170Vrms 1 Channel 6-DIP

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