onsemi_MDB6S
original

onsemi
MDB6S

299-MDB6S
PDF Datasheet
600V 1A Bridge Rectifier Diode, 4-Pin, SILICON, Micro DIP SMD
18 weeks

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Tech Specifications

Max Operating Temperature
150
Number of Terminals
4
Min Operating Temperature
-55
Terminal Position
DUAL
Number of Elements
4
Diode Element Material
SILICON
Diode Type
BRIDGE RECTIFIER DIODE
Rep Pk Reverse Voltage-Max
600
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MDB6S Description

The MDB6S is a high voltage, high-power diode from ON Semiconductor. It is designed to handle high voltage and high current applications, making it suitable for a variety of uses.

Description:

The MDB6S is a silicon rectifier diode that is designed for high voltage, high current applications. It is housed in a hermetically sealed package, which provides increased reliability and durability. The diode has a maximum repetitive reverse voltage (VRRM) of 600V and a maximum average forward current (IF) of 16A.

Features:

  • High voltage, high current capability
  • Hermetically sealed package for increased reliability
  • Low forward voltage drop
  • High surge current capability
  • Fast switching times

Applications:

The MDB6S is commonly used in a variety of high voltage, high current applications, including:

  • Power supplies
  • Motor control circuits
  • Inverter circuits
  • High voltage power conversion
  • Battery charging circuits
  • High voltage power transmission

Overall, the MDB6S is a versatile and reliable diode that is well-suited for a wide range of high voltage, high current applications. Its high voltage and current handling capabilities, along with its hermetically sealed package, make it a popular choice for engineers and designers working on power electronics projects.

FAQ

What operating temperature range does MDB6S support?
MDB6S has an operating temperature range of 150.
What is the standard lead time for MDB6S?
Is MDB6S currently in stock?
What voltage specification is listed for MDB6S?
Are there related or alternative parts for MDB6S?
Availability (In Stock : 9354 )
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5000+ $0.14830 $741.50
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