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MGSF1N03LT1G
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MGSF1N03LT1G Description
The MGSF1N03LT1G is a high voltage MOSFET transistor manufactured by ON Semiconductor. It is a N-channel enhancement mode device that is designed for high voltage applications.
Description:
The MGSF1N03LT1G is a high voltage MOSFET transistor that features a drain-source voltage (VDS) of -30V, a gate-source voltage (VGS) of -10V, and a continuous drain current (ID) of 3.3A. It is available in a TO-220 package.
Features:
- N-channel, enhancement mode
- High voltage operation
- Low on-state resistance (RDS(on))
- Fast switching times
- High input impedance
Applications:
The MGSF1N03LT1G is suitable for a wide range of applications that require high voltage and high current handling capabilities. Some of the common applications include:
- Motor control circuits
- Power supplies
- Inverter circuits
- Battery protection circuits
- High voltage switch mode power supplies (SMPS)
- Industrial control systems
- Automotive applications
In summary, the MGSF1N03LT1G is a high voltage MOSFET transistor that offers high performance and reliability in a wide range of applications. Its features such as low on-state resistance, fast switching times, and high input impedance make it an ideal choice for high voltage applications.





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