onsemi_MGSF2N02ELT1G
original

onsemi
MGSF2N02ELT1G

278-MGSF2N02ELT1G
PDF Datasheet
N-Ch MOSFET, 20V, 2.8A, 85mR, SOT-23
32 Weeks

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Tech Specifications

Package/Case
SOT-23-3
Continuous Drain Current (ID)
2.8A
Current Rating
2.8A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
85mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
85MR
Element Configuration
Single
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MGSF2N02ELT1G Description

MGSF2N02ELT1G is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is a N-channel, logic level FET that is designed for low voltage, high current applications.

Description:

The MGSF2N02ELT1G is a N-channel MOSFET that features a low gate threshold voltage, fast switching speed, and high input impedance. It is available in a surface-mount TO-263-2 package.

Features:

  • N-channel, logic level MOSFET
  • Low gate threshold voltage (2.5V max)
  • Fast switching speed (tON < 3.5ns, tOFF < 20ns)
  • High input impedance
  • Avalanche energy rating of 200mJ
  • Repetitive avalanche rating of 50A
  • Available in a surface-mount TO-263-2 package

Applications:

The MGSF2N02ELT1G is suitable for a wide range of applications, including:

  • Motor control
  • Switch mode power supplies (SMPS)
  • DC-DC converters
  • Battery protection circuits
  • Inverters
  • Class D audio amplifiers
  • Load switches

It is important to note that this is a general description and the specific application of the device may vary depending on the design requirements. It is always recommended to refer to the datasheet and consult with a professional engineer for specific design requirements.

FAQ

What is MGSF2N02ELT1G?
MGSF2N02ELT1G is a Single FETs, MOSFETs from onsemi. This product page provides its main specifications, pricing information, availability, and inquiry options.
What operating temperature range does MGSF2N02ELT1G support?
Is MGSF2N02ELT1G currently in stock?
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