onsemi
MJ15024G  
Single Bipolar Transistors

onsemi
MJ15024G
276-MJ15024G
Ersa
onsemi-MJ15024G-datasheets-8367541.pdf
TRANS NPN 250V 16A TO204
In Stock : 1940

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    MJ15024G Description

    The MJ15024G is a high-voltage, high-power transistor from ON Semiconductor. It is designed for use in high-power applications, such as power amplifiers, power supplies, and motor control circuits.

    Description:

    The MJ15024G is a Darlington transistor, which means it consists of two bipolar junction transistors (BJTs) connected in a way that their currents are added together. This configuration allows the transistor to handle high currents and voltages. The MJ15024G has a collector-emitter voltage (Vce) rating of 400V and a continuous collector current (Ic) rating of 2A.

    Features:

    • High collector-emitter voltage (Vce) rating of 400V
    • High continuous collector current (Ic) rating of 2A
    • Darlington configuration for high current and voltage handling capability
    • Suitable for use in high-power applications
    • Available in a TO-3P (metal) package

    Applications:

    The MJ15024G is suitable for use in a variety of high-power applications, including:

    • Power amplifiers
    • Power supplies
    • Motor control circuits
    • Switching regulators
    • Inverters
    • Industrial control equipment

    Overall, the MJ15024G is a high-power transistor that offers high voltage and current handling capability in a single package. Its Darlington configuration makes it well-suited for use in high-power applications where high current and voltage are required.

    Tech Specifications

    Configuration
    PPAP
    Product Status
    Voltage - Collector Emitter Breakdown (Max)
    Automotive
    Supplier Package
    Transistor Type
    Package / Case
    REACH Status
    Maximum Collector-Emitter Saturation Voltage (V)
    EU RoHS
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Collector Base Voltage (V)
    Frequency - Transition
    Current - Collector (Ic) (Max)
    ECCN
    Maximum Emitter Base Voltage (V)
    Mounting Type
    Standard Package Name
    Pin Count
    Mounting
    Lead Shape
    SVHC
    HTSUS
    Package
    Category
    PCB changed
    HTS
    Number of Elements per Chip
    Maximum Collector-Emitter Voltage (V)
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Package Height
    Mfr
    RoHS Status
    Maximum Transition Frequency (MHz)
    SVHC Exceeds Threshold
    Maximum Base Current (A)
    Vce Saturation (Max) @ Ib, Ic
    Material
    Package Length
    Series
    Type
    Minimum DC Current Gain
    Operating Junction Temperature (°C)
    Tab
    Maximum DC Collector Current (A)
    Power - Max
    Part Status
    Current - Collector Cutoff (Max)
    Package Width
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Base Product Number
    Unit Weight
    Continuous Collector Current
    RoHS
    Maximum DC Collector Current
    Technology
    Collector-Emitter Saturation Voltage
    Collector- Base Voltage VCBO
    Height
    Maximum Operating Temperature
    DC Collector/Base Gain hfe Min
    Width
    Mounting Style
    Transistor Polarity
    Minimum Operating Temperature
    Emitter- Base Voltage VEBO
    Length
    Gain Bandwidth Product fT
    Collector- Emitter Voltage VCEO Max
    Pd - Power Dissipation
    USHTS

    MJ15024G Documents

    Download datasheets and manufacturer documentation for MJ15024G

    Ersa MJ15022, 24      
    Ersa MJ15022, 24      
    Ersa onsemi RoHS       Material Declaration MJ15024G       onsemi REACH      

    Shopping Guide

    Payment Methods
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    Shipping Rate
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