onsemi

MJ15025G

MJ15025G Description

The MJ15025G from onsemi is a high-power PNP bipolar junction transistor (BJT) designed for demanding industrial and commercial applications. With a 250V collector-emitter breakdown voltage (Vce) and a 16A continuous collector current (Ic), it delivers robust performance in high-voltage, high-current circuits. The transistor features a 4MHz transition frequency, ensuring efficient switching in medium-frequency applications. Its 250W maximum power dissipation makes it suitable for power amplification and regulation tasks. Packaged in a TO-204 (TO-3) case, the MJ15025G is optimized for through-hole mounting, providing excellent thermal management and mechanical stability.

MJ15025G Features

• High Power Handling: 250W max power dissipation for demanding applications.
• Low Saturation Voltage: 4V @ 3.2A base current (Ib) and 16A collector current (Ic), reducing power losses.
• High Current Gain (hFE): Minimum 15 @ 8A, 4V, ensuring efficient signal amplification.
• Low Leakage Current: 500µA max collector cutoff current (Icbo), enhancing energy efficiency.
• Robust Construction: TO-204 (TO-3) package for superior heat dissipation and durability.
• Compliance: ROHS3 and REACH compliant, meeting environmental and safety standards.

MJ15025G Applications

The MJ15025G excels in high-power circuits, including:

• Power Supplies: Linear regulators and high-current switching modules.
• Audio Amplifiers: High-fidelity Class AB/B amplifiers requiring low distortion.
• Motor Control: Drivers for industrial motors and actuators.
• Inverters & Converters: High-voltage DC-AC or DC-DC conversion systems.
• Industrial Equipment: Welding machines, UPS systems, and power distribution units.

Conclusion of MJ15025G

The MJ15025G is a high-reliability PNP transistor offering exceptional power handling, low saturation voltage, and strong thermal performance. Its 250V/16A rating and TO-204 package make it ideal for high-power amplification, switching, and control applications. With onsemi’s proven quality and compliance with ROHS3/REACH, this transistor is a dependable choice for engineers designing robust power electronics systems.