onsemi_MJB45H11G
original

onsemi
MJB45H11G

276-MJB45H11G
PDF Datasheet
PNP BJT Transistor, 80V, 10A, D2PAK
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Tech Specifications

Package/Case
D2PAK
Collector Base Voltage (VCBO)
5V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
1V
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
1V
Current Rating
-10A
Emitter Base Voltage (VEBO)
5V
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MJB45H11G Description

MJB45H11G Description

The MJB45H11G is a high-performance PNP bipolar transistor designed and manufactured by onsemi. This device is known for its exceptional electrical characteristics, making it suitable for a wide range of applications. With a maximum collector current of 10 A and a collector-emitter breakdown voltage of 80 V, the MJB45H11G delivers outstanding performance in high-power and high-voltage applications.

MJB45H11G Features

  • High Collector Current (Ic): The MJB45H11G can handle a maximum collector current of 10 A, making it ideal for high-current applications.
  • Low Vce Saturation: With a low Vce saturation of 1 V at 400 mA and 8 A, the MJB45H11G offers high efficiency in low-voltage applications.
  • High DC Current Gain (hFE): The device boasts a minimum DC current gain of 40 at 4 A and 1 V, ensuring reliable operation in various circuits.
  • Surface Mount Packaging: The D2PAK surface mount package allows for easy integration into modern electronic designs.
  • RoHS Compliance: The MJB45H11G is compliant with RoHS3 standards, making it suitable for environmentally friendly applications.
  • REACH Unaffected Status: This product is not affected by REACH regulations, ensuring uninterrupted supply and use in various industries.

MJB45H11G Applications

The MJB45H11G's unique combination of high current handling and low saturation voltage makes it an ideal choice for several applications:

  1. Power Amplifiers: The high current and power ratings make it suitable for use in power amplifiers, where high current and voltage swings are common.
  2. Switching Regulators: The low Vce saturation and high current gain make the MJB45H11G an excellent choice for switching regulators in power management systems.
  3. Motor Control: The device's high current and voltage ratings make it suitable for motor control applications, where high power and voltage are required.
  4. Industrial Automation: The MJB45H11G's robust performance characteristics make it ideal for use in industrial automation systems, where reliability and performance are critical.

Conclusion of MJB45H11G

The MJB45H11G from onsemi is a versatile PNP bipolar transistor that offers a unique combination of high current handling, low saturation voltage, and high current gain. Its surface mount packaging, RoHS compliance, and REACH unaffected status make it an excellent choice for a wide range of applications, including power amplifiers, switching regulators, motor control, and industrial automation. With its robust performance characteristics and compliance with industry standards, the MJB45H11G is a reliable and efficient solution for high-power and high-voltage applications.

FAQ

What operating temperature range does MJB45H11G support?
MJB45H11G has an operating temperature range of 150°C.
What package or case is MJB45H11G available in?
What is MJB45H11G?
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