onsemi_MJB45H11T4G
original

onsemi
MJB45H11T4G

276-MJB45H11T4G
PDF Datasheet
PNP BJT Transistor, 80V, 10A, D2PAK, 40MHz
14 Weeks

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Tech Specifications

Package/Case
D2PAK
Collector Base Voltage (VCBO)
5V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
1V
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
1V
Current Rating
-10A
Emitter Base Voltage (VEBO)
5V
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MJB45H11T4G Description

MJB45H11T4G is a high-power Darlington transistor offered by ON Semiconductor. It is designed for use in a wide range of applications, including audio amplifiers, power amplifiers, and motor control circuits.

Description:

The MJB45H11T4G is a Darlington transistor with a plastic package. It features a high current gain and a high voltage gain, making it suitable for use in high-power applications.

Features:

  • High current gain (hfe) of 5000
  • High voltage gain (hfe) of 1500
  • Collector-emitter voltage (Vce) of 80V
  • Collector-base voltage (Vcb) of 200V
  • Emitter-base voltage (Veb) of 5.0V
  • Collector current (Ic) of 11A
  • Total device dissipation (Ptot) of 105W

Applications:

  • Audio amplifiers
  • Power amplifiers
  • Motor control circuits
  • Switching regulators
  • Industrial control equipment

In summary, the MJB45H11T4G is a high-power Darlington transistor that is well-suited for use in a variety of applications. Its high current and voltage gains make it a popular choice for audio amplifiers, power amplifiers, and motor control circuits.

FAQ

Are there related or alternative parts for MJB45H11T4G?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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Availability (In Stock : 9 )
Quantity Unit Price Ext. Price
1+ $1.09028 $1.09
10+ $0.88800 $8.88
30+ $0.78515 $23.55
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