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MJD112-1G
276-MJD112-1G
PDF Datasheet
NPN Darlington Transistor, 100V, 2A, 1.75W, TO-251
12 Weeks
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Tech Specifications
Package/Case
TO-251-3
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
2V
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
3V
Continuous Collector Current
2A
Current Rating
2A
MJD112-1G Description
Bipolar (BJT) Transistor NPN - Darlington 100 V 2 A 25MHz 1.75 W Through Hole IPAK
FAQ
What is MJD112-1G?
MJD112-1G is a Single Bipolar Transistors from onsemi. This product page provides its main specifications, pricing information, availability, and inquiry options.
What operating temperature range does MJD112-1G support?
What voltage specification is listed for MJD112-1G?
What package or case is MJD112-1G available in?
Does MJD112-1G have quantity-based pricing?
Availability
(In Stock :
101 )
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.35772 | $1.36 |
| 10+ | $1.13485 | $11.35 |
| 30+ | $1.01315 | $30.39 |
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Unit Price $1.35772
Subtotal $1.36
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